Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

New material shows promise for next-generation memory technology

Phase change memory is a type of nonvolatile memory that harnesses a phase change material's (PCM) ability to shift from an amorphous state, i.e., where atoms are disorganized, to a crystalline state, i.e., where atoms are ...

Examining a nanocrystal that shines on and off indefinitely

In 2021, lanthanide-doped nanoparticles made waves—or rather, an avalanche—when Changwan Lee, then a Ph.D. student in Jim Schuck's lab at Columbia Engineering, set off an extreme light-producing chain reaction from ultrasmall ...

Photonic synapses with low power consumption and high sensitivity

Neuromorphic photonics/electronics is the future of ultralow energy intelligent computing and artificial intelligence (AI). In recent years, inspired by the human brain, artificial neuromorphic devices have attracted extensive ...

Researchers realize coherent storage of light over one hour

Remote quantum distribution on the ground is limited because of the loss of photons in optical fibers. One solution for remote quantum communication lies in quantum memories: photons are stored in long-lived quantum memory ...

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